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US 10,700,667 B2Granted
Metal-semiconductor-metal two-dimensional electron gas varactor and method of manufacturing the same
AssigneeGwangju Institute of Science and Technology
InventorsJae Hyung Jang, Ji Hyun Hwang
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Abstract
Disclosed are a metal-semiconductor-metal two-dimensional electron gas varactor (MSM-2DEG) and a method of manufacturing the same. There is provided an MSM-2DEG varactor having an asymmetric structure, which includes a first gate formed on a semiconductor layer, and a second gate spaced apart at a predetermined distance from the first gate and formed on the semiconductor layer, wherein the first gate and the second gate are different in shape and gate length.
Claims8
A metal-semiconductor-metal two-dimensional electron gas (MSM-2DEG) varactor comprising:
- a first gate formed on a semiconductor layer;
- a second gate formed on the semiconductor layer and spaced apart at a predetermined distance from the first gate, the first gate and the second gate being different in shape and gate length;
- a third gate formed on the semiconductor layer and spaced apart at the predetermined distance from the second gate, wherein the first gate and the third gate are symmetrical to each other with respect to the second gate;
- and
- a dielectric formed on the semiconductor layer and disposed between the second gate and the semiconductor layer at the lower left and lower right sides of the second gate;
- wherein a first space having the predetermined distance between the first and second gate is free from the dielectric and a second space having the predetermined distance between the second gate and the third gate is free from the dielectric.
3 more elements
Dependencies are inferred from the claim text.