Integrated circuit device with plating on lead interconnection point and method of forming the device
AssigneeSTMicroelectronics SDN BHD
InventorCheeyang Ng
Life of this patent
Estimating the term…
Abstract
An integrated circuit (IC) device includes an IC die and a plurality of leads. Each lead includes an unplated proximal end including a first material, and an unplated distal end including the first material. A plated bond wire portion extends between the proximal and distal ends and includes the first material and a plating of a second material thereon. A plurality of bond wires extend between the IC die and the plated bond wire portions of the leads. An encapsulation material surrounds the IC die and bond wires so that the unplated proximal end and plated bond wire portion of each lead are covered by the encapsulation material.
Claims20
An integrated circuit (IC) device, comprising:
- an IC die;
- a plurality of leads, each lead of the plurality of leads extending along a lead extension direction and comprising:
- an unplated proximal end comprising a first material;
- an unplated distal end comprising the first material;
- and
- a bond wire portion between the unplated proximal end and the unplated distal end, the bond wire portion comprising a plurality of plated regions and at least one unplated region, each plated region of the plurality of plated regions comprising the first material and a plating comprising a second material on the first material;
- a plurality of bond wires, each bond wire of the plurality of bond wires extending between the IC die and the bond wire portion of a respective lead;
- and
- an encapsulation material surrounding the IC die and the plurality of bond wires such that the unplated proximal end and bond wire portion of each lead are covered by the encapsulation material.
A method for making an integrated circuit (IC) device, comprising:
- forming a plurality of leads, each lead of the plurality of leads extending along a lead extension direction and comprising:
- an unplated proximal end comprising a first material;
- an unplated distal end comprising the first material;
- and
- a bond wire portion between the unplated proximal end and the unplated distal end, the bond wire portion comprising a plurality of plated regions and at least one unplated region, each plated region of the plurality of plated regions comprising the first material and a plating comprising a second material on the first material;
- coupling a plurality of bond wires to an IC die and the plurality of leads so that each bond wire of the plurality of bond wires extends between the IC die and the bond wire portion of a respective lead;
- and
- forming an encapsulation material to surround the IC die and the plurality of bond wires such that the unplated proximal end and the bond wire portion of each lead are covered by the encapsulation material.
An integrated circuit (IC) device, comprising:
- an IC die;
- a plurality of leads, each lead of the plurality of leads having a planar shape along a plane parallel to a major surface of the IC die and comprising:
- a first edge surface and an opposite second edge surface, the second edge surface facing the IC die and the first edge surface facing away from the IC die;
- a first portion comprising a first material and being un-plated, the first portion being disposed between the first edge surface and the second edge surface, the first portion comprising a first major surface parallel to the plane;
- a second portion comprising the first material and being un-plated, the second portion being disposed between the second edge surface and the first portion, the second portion comprising a second major surface parallel to the plane;
- and
- a third portion comprising the first material and being disposed between the first portion and the second portion, the third portion comprising a third major surface parallel to the plane, the third portion further comprising a first plating layer comprising a second material, the third portion being spaced from the second edge surface by the second portion;
- a plurality of bond wires, each bond wire of the plurality of bond wires extending between the IC die and the third portion of a respective lead;
- and
- an encapsulation material surrounding the IC die and the plurality of bond wires such that the second edge surface, the second portion, and the third portion of each lead are covered by the encapsulation material, the encapsulation material partially covering the first portion of each lead of the plurality of leads such that the first portion of each lead of the plurality of leads extends out of the encapsulation material.
Dependencies are inferred from the claim text.