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US 10,693,033 B2Granted
Semiconductor chip and method for producing a semiconductor chip
AssigneeOSRAM OLED GmbH
InventorsAlfred Lell, Andreas Löffler, Christoph Eichler, Bernhard Stojetz, André Somers
Life of this patent
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Abstract
A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
Claims17
A semiconductor chip, having a semiconductor layer sequence with a first semiconductor layer, the first semiconductor layer having a lateral variation of a material composition and a constant thickness along at least one direction of extent, wherein
- the semiconductor chip is embodied as a laser diode chip having a laser strip, in which light is generated during operation, and a facet, via which the light is emitted during the operation,
- the first semiconductor layer has at least one first region and has second regions laterally adjacent to the at least one first region,
- the first region and the second regions comprise a same material system,
- a material composition of the first region is different from a material composition of the second regions, wherein the first region and the second regions have a same thickness,
- the first region is formed in a region of the laser strip, and
- the second regions are formed, in a lateral direction transversely in relation to a direction of extent of the laser strip, on both sides next to the laser strip.
3 more elements
Dependencies are inferred from the claim text.