Semiconductor light emitting element and semiconductor light emitting element assembly

A semiconductor light emitting element assembly comprising:

• a semiconductor light emitting element having a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer;
• the semiconductor light emitting element assembly satisfying P2>P1,
• wherein P1 is a maximum optical output emitted when temperature of the active layer is T1, and P2 is the maximum optical output emitted when the temperature of the active layer is T2, and T2>T1, and
• wherein an operating current when an optical pulse repetition frequency changes from a fundamental frequency determined by a distance of an optical system to a frequency twice the fundamental frequency is an upper limit value of an operating current range of the semiconductor light emitting element.

A semiconductor light emitting element comprising:

• a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer;
• the semiconductor light emitting element satisfying ΔI2>ΔI1,
• wherein ΔI1 is a first operating current range when temperature of the active layer is T1, and ΔI2 is a second operating current range when the temperature of the active layer is T2, and T2>T1, and
• wherein an operating current when an optical pulse repetition frequency changes from a fundamental frequency determined by a distance of an optical system to a frequency twice the fundamental frequency is an upper limit value of an operating current range of the semiconductor light emitting element.

A semiconductor light emitting element comprising:

• a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer;
• the semiconductor light emitting element satisfying P2>P1,
• wherein P1 is a maximum optical output emitted when temperature of the active layer is T1, and P2 is the maximum optical output emitted when the temperature of the active layer is T2, and T2>T1, and
• wherein an operating current when an optical pulse repetition frequency changes from a fundamental frequency determined by a distance of an optical system to a frequency twice the fundamental frequency is an upper limit value of an operating current range of the semiconductor light emitting element.