Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
AssigneeApplied Materials, Inc.
InventorJames Rogers
Life of this patent
Estimating the term…
Abstract
The present disclosure generally relates to apparatuses and methods that control RF amplitude of an edge ring. The apparatuses and methods include an electrode that is coupled to ground through a variable capacitor. The electrode may be ring-shaped and embedded in a substrate support including an electrostatic chuck. The electrode may be positioned beneath the perimeter of a substrate and/or the edge ring. As the plasma sheath drops adjacent the edge ring due to edge ring erosion, the capacitance of the variable capacitor is adjusted in order to affect the RF amplitude near the edge of the substrate. Adjustment of the RF amplitude via the electrode and variable capacitor results in adjustment of the plasma sheath near the substrate perimeter.
Claims20
A substrate support, comprising:
- an electrostatic chuck having one or more chucking electrodes embedded therein for chucking a substrate to the electrostatic chuck;
- a ceramic layer disposed over the electrostatic chuck;
- a ceramic ring positioned around the ceramic layer;
- an edge ring in contact with the ceramic ring and the ceramic layer, wherein the edge ring comprises a recess formed in a lower surface thereof, the recess defining a gap between the edge ring and an upper surface of the ceramic ring;
- an electrode embedded in the ceramic ring;
- and
- a variable capacitor coupled to the electrode through one or more transmission lines.
A process chamber, comprising:
- a chamber body;
- a lid disposed on the chamber body;
- an inductively coupled plasma apparatus positioned above the lid;
- and
- a substrate support positioned within the chamber body, the substrate support comprising:
- an electrostatic chuck having one or more chucking electrodes embedded therein for chucking a substrate to the electrostatic chuck;
- a ceramic layer disposed over the electrostatic chuck;
- a ceramic ring positioned around the ceramic layer;
- an edge ring disposed on and in contact with the ceramic ring and the ceramic layer, wherein the edge ring comprises a recess formed in a lower surface thereof, the recess defining a gap between the edge ring and an upper surface of the ceramic ring;
- and
- an electrode embedded in the ceramic ring, the electrode coupled to a variable capacitor through one or more transmission lines.
A substrate support, comprising:
- an electrostatic chuck having one or more chucking electrodes embedded therein;
- a ceramic layer disposed over the electrostatic chuck;
- a ceramic ring positioned around the ceramic layer;
- an edge ring in contact with the ceramic ring and the ceramic layer, wherein the edge ring comprises a recess formed in a lower surface thereof, the recess defining a gap between the edge ring and an upper surface of the ceramic ring;
- a thermal gasket disposed in the gap between the ceramic ring and the edge ring;
- an electrode embedded in the ceramic ring;
- and
- a variable capacitor coupled to the electrode through one or more transmission lines.
Dependencies are inferred from the claim text.