Hydrogen co-gas when using aluminum iodide as an ion source material
AssigneeAxcelis Technologies, Inc.
InventorsNeil Colvin, Tseh-Jen Hsieh, Neil Basson
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Abstract
An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.
Claims16
An ion implantation system, comprising:
- an aluminum iodide source material;
- an ion source configured to ionize the aluminum iodide source material and form an ion beam therefrom, and whereby the ionization of the aluminum iodide source material further forms a by-product comprising a non-conducting material containing iodine;
- a hydrogen introduction apparatus configured to introduce a reducing agent comprising hydrogen to the ion source, wherein the reducing agent is configured to alter a chemistry of the non-conducting material to produce a volatile gas by-product;
- a beamline assembly configured to selectively transport the ion beam;
- and
- an end station configured to accept the ion beam for implantation of ions into a workpiece.
Dependencies are inferred from the claim text.