Optoelectronic device based on a surface-trapped optical mode

An optoelectronic device comprising

• a) a first multilayer distributed Bragg reflector bounded from the top by a homogeneous medium having a refractive index lower than the refractive index of the topmost layer of said first multilayer reflector,
• wherein said first multilayer distributed Bragg reflector localizes a first optical mode;
• wherein said first optical mode is a TM-polarized surface-trapped optical mode;
• wherein said first optical mode
• i) is localized at a boundary between said first multilayer distributed Bragg reflector and said homogeneous medium, and
• ii) exhibits an evanescent decay in said homogeneous medium away from said boundary, and
• iii) exhibits an oscillatory decay in said first multilayer distributed Bragg reflector away from said boundary;
• and
• b) a multilayer structure contiguous to said first multilayer distributed Bragg reflector at the side opposite to said homogeneous medium;
• wherein said multilayer structure localizes a second optical mode;
• wherein said multilayer structure further comprises an active medium;
• wherein said first optical mode and said second optical mode exist at a same wavelength of light;
• wherein a non-zero overlap integral exists between said first optical mode and said second optical mode;
• wherein said non-zero overlap integral is above ten percent.