Method for processing a semiconductor device and semiconductor device
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Andreas Haertl, Francisco Javier Santos Rodriguez, André Rainer Stegner, Daniel Schloegl
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Abstract
A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.
Claims19
A semiconductor device, comprising:
- a semiconductor body;
- a plurality of regions in the semiconductor body each comprising a eutectic of a first metallization material and material of the semiconductor body, wherein at least two of the plurality of regions are non-contiguous and neighboring regions separated by one or more portions of the semiconductor body;
- and
- a second metallization material disposed over the semiconductor body,
- wherein the plurality of regions comprises a first region non-contiguous to a second region neighboring the first region and wherein the plurality of regions are spike-shaped regions, and
- wherein the second metallization covers and contacts the first region, the second region, and a portion of the semiconductor body separating the first region from the second region.
Dependencies are inferred from the claim text.