Integrated device and method of forming the same

A method for forming an integrated device, comprising:

• providing a first circuit having a first connecting path in a first metal line layer, a second connecting path in a second metal line layer, and a third connecting path in a third metal line layer, wherein the first connecting path is electrically coupled to a first terminal of the second connecting path, and the third connecting path is electrically coupled to a second terminal of the second connecting path, wherein the second metal line layer is between the first metal line layer and the third metal line layer;
• analyzing an electromigration (EM) data of the second connecting path to determine if the second connecting path induces EM phenomenon;
• modifying the first circuit for generating a second circuit when the second connecting path induces EM phenomenon;
• and
• generating the integrated device according to the second circuit.

A system for forming an integrated device, comprising:

• a designing tool, arranged to provide a first circuit cell having an output pin formed therein, wherein the output pin is defined in a metal line layer;
• an electromigration (EM) analyzing tool, arranged to analyze an EM data of the output pin to determine if the output pin induces EM phenomenon;
• a modifying tool, arranged to modify the output pin for generating a second circuit cell having a modified output pin when the EM analyzing tool indicates that the output pin induces EM phenomenon;
• and
• a fabricating tool, arranged to generate the integrated device according to the second circuit cell.