Thin-film solid-state energy storage devices
AssigneeSpace Charge, LLC
InventorsJohn B. Read, Daniel C. Sweeney
Life of this patent
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Abstract
Described are solid-state energy storage devices and methods of making solid-state energy storage devices in which components of the batteries are truly solid-state and do not comprise a gel. Useful electrodes include metals and metal oxides, and useful electrolytes include amorphous ceramic thin film electrolytes that permit conduction or migration of ions across the electrolyte. Disclosed methods of making solid-state energy storage devices include multi-stage deposition processes, in which an electrode is deposited in a first stage and an electrolyte is deposited in a second stage.
Claims22
A Faradaic solid-state energy storage device comprising:
- a first electrode,
- wherein the first electrode has a first thickness, wherein the first thickness is greater than 1 nm and less than or equal to 80 nm, and
- wherein the first electrode comprises a first metal containing composition;
- a solid electrolyte positioned in direct contact with the first electrode,
- wherein the solid electrolyte has a second thickness, wherein the second thickness is greater than 1 nm and less than or equal to 500 nm,
- wherein the solid electrolyte has an amorphous structure, and
- wherein the solid electrolyte comprises a solid-state material that selectively conducts ions at least at temperatures of between about 0° C. and about 100° C.;
- and
- a second electrode positioned in direct contact with the solid electrolyte,
- wherein the second electrode has a third thickness, wherein the third thickness is greater than 1 nm and less than or equal to 80 nm, and
- wherein the second electrode comprises a second metal containing composition.
A method of making a Faradaic solid-state energy storage device, the method comprising:
- depositing a first electrode on a substrate,
- wherein the first electrode is deposited to a first thickness, wherein the first thickness is selected from about 1 nm to about 80 nm,
- wherein the first electrode comprises a first metal containing composition, and
- wherein depositing the first electrode includes depositing using a first controllable deposition method;
- depositing a solid electrolyte on the first electrode,
- wherein the solid electrolyte is deposited to a second thickness, wherein the second thickness is selected from about 1 nm to about 250 nm,
- wherein the solid electrolyte has an amorphous structure, and
- wherein the solid electrolyte comprises a solid-state material that selectively conducts ions at least at temperatures of between about 0° C. and about 100° C., and
- wherein depositing the solid electrolyte includes depositing using a second controllable deposition method;
- and
- depositing a second electrode on the solid electrolyte,
- wherein the second electrode is deposited to a third thickness, wherein the third thickness is selected from about 1 nm to about 80 nm,
- wherein the second electrode comprises a second metal containing composition, and
- wherein depositing the second electrode includes depositing using a third controllable deposition method.
Dependencies are inferred from the claim text.