Wavelength-converting film and semiconductor light emitting apparatus having the same

A semiconductor light emitting device, comprising:

• first and second electrode structures;
• a semiconductor light-emitting diode chip electrically connected to the first and second electrode structures and emitting first light having a peak wavelength in a range of 440 nm to 460 nm;
• and
• a wavelength-converting film along a path of light generated in the semiconductor light-emitting diode chip and including a sintered body including a mixture of a wavelength-converting material configured to convert first light into second light having a different wavelength and a glass composition,
• wherein the wavelength-converting material includes a quantum dot having a core-shell structure and a protective layer coating a surface of the quantum dot,
• a shell of the quantum dot contains at least one of S and Se, and the protective layer does not contain S or Se, and
• the glass composition includes a SnO2—P2O5—SiO2-based composition, and
• wherein the protective layer is configured to prevent direct contact between a Sn component of the glass composition and a S or Se component of the shell.