Solar cells with improved lifetime, passivation and/or efficiency
AssigneeSunPower Corporation
InventorsDavid D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
Life of this patent
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Abstract
A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
Claims8
A method of fabricating a solar cell, the solar cell having a front side which faces the sun during normal operation and a back side opposite the front side, the method comprising:
- forming a dielectric region on a back side of a silicon substrate;
- forming a first emitter region over the dielectric region;
- forming a dopant region on a front side of the silicon substrate;
- and
- heating the silicon substrate at a temperature above 900 degrees Celsius to getter contaminants to a portion of the silicon substrate, to getter contaminants to the emitter region, and to drive dopants from the dopant region to the portion of the silicon substrate;
- and
- prior to heating the silicon substrate at the temperature above 900 degrees Celsius, performing at least one other separate and distinct heating operation at a temperature below 900 degrees Celsius.
A method of fabricating a solar cell, the solar cell having a front side which faces the sun during normal operation and a back side opposite the front side, the method comprising:
- forming a dielectric region on a back side and on a front side of a silicon substrate;
- forming a first emitter region over the dielectric region on the front side of the silicon substrate, the first emitter region having metal impurities;
- forming a second emitter region over the dielectric region on the back side of the silicon substrate, the second emitter region having metal impurities;
- forming a dopant region on the front side of the silicon substrate;
- heating the silicon substrate at a temperature above 900 degrees Celsius to getter metal contaminants to a portion of the silicon substrate, to getter metal contaminants to the first and second emitter regions and to drive dopants from the first dopant region to the portion of the silicon substrate;
- prior to heating the silicon substrate at the temperature above 900 degrees Celsius, performing at least one other separate and distinct heating operation at a temperature below 900 degrees Celsius;
- and
- forming first and second metal contacts over the first and second emitter regions, respectively.
Dependencies are inferred from the claim text.