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US 10,655,243 B2Granted
Growth of epitaxial gallium nitride material using a thermally matched substrate
AssigneeQROMIS, Inc.
InventorsVladimir Odnoblyudov, Cem Basceri
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Abstract
An engineered substrate includes a support structure comprising a polycrystalline ceramic core, an adhesion layer coupled to the polycrystalline ceramic core, and a barrier layer coupled to the adhesion layer. The engineered substrate also includes an bonding layer coupled to the support structure, a substantially single crystal layer coupled to the bonding layer, and an epitaxial gallium nitride layer coupled to the substantially single crystal layer.
Claims18
An engineered substrate comprising:
- a support structure comprising:
- a polycrystalline ceramic core;
- an adhesion layer coupled to the polycrystalline ceramic core;
- a conductive layer coupled to the adhesion layer;
- and
- a barrier layer encapsulating the conductive layer, the adhesion layer, and the polycrystalline ceramic core;
- a bonding layer coupled to the support structure;
- a substantially single crystal layer coupled to the bonding layer;
- and
- an epitaxial gallium nitride layer coupled to the substantially single crystal layer.
7 more elements
Dependencies are inferred from the claim text.