Thin film encapsulation processing system and process kit
AssigneeApplied Materials, Inc.
InventorsShinichi Kurita, Srikanth V. Racherla, Suhas Bhoski, Xiangxin Rui
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.
Claims16
A process kit for use in an atomic layer deposition (ALD) chamber, said process kit comprising:
- a dielectric window;
- a sealing frame;
- a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof;
- a diffuser coupled to the gas inlet channel;
- and
- an exhaust manifold coupled to the gas outlet channel, wherein the diffuser and the exhaust manifold each comprise:
- a port;
- and
- a flow path coupled to the port partially defined by an elliptically tapered surface, wherein a cross-section of the flow path has a height at a center portion that is less than a height at a peripheral portion, and wherein the height at the center portion and the height at the peripheral portion are each proportionate to a square root of a ratio of a first radial distance from the port to a second radial distance from the port.
A process kit for use in an atomic layer deposition (ALD) chamber, said process kit comprising:
- a dielectric window;
- a sealing frame;
- a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof;
- a mask sheet coupled to the mask frame;
- a diffuser coupled to the gas inlet channel;
- and
- an exhaust manifold coupled to the gas outlet channel, wherein the diffuser and the exhaust manifold each comprise:
- a port;
- and
- a flow path coupled to the port partially defined by an elliptically tapered surface, wherein a cross-section of the flow path has a height at a center portion that is less than a height at a peripheral portion, and wherein the height at the center portion and the height at the peripheral portion are each proportionate to a square root of a ratio of a first radial distance from the port to a second radial distance from the port.
An apparatus for processing a substrate, comprising:
- a chamber body;
- a susceptor body;
- at least one process gas inlet;
- at least one pumping port;
- and
- a process kit, wherein the process kit comprises:
- a dielectric window;
- a sealing frame;
- a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof;
- a diffuser coupled to the gas inlet channel;
- an exhaust manifold coupled to the gas outlet channel, wherein the diffuser and the exhaust manifold each comprise:
- a port;
- and
- a flow path coupled to the port partially defined by an elliptically tapered surface, wherein a cross-section of the flow path has a height at a center portion that is less than a height at a peripheral portion, and wherein the height at the center portion and the height at the peripheral portion are each proportionate to a square root of a ratio of a first radial distance from the port to a second radial distance from the port;
- and
- a mask sheet in contact with a substrate positioned on the susceptor body.
Dependencies are inferred from the claim text.