Plasma processing apparatus and microwave output device
AssigneeHitachi High-Tech Corporation
InventorsKoichi Yamamoto, Atsushi Itou
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Abstract
A plasma processing apparatus includes: a high voltage power supply for supplying a high voltage power to a magnetron; and a detector for detecting a microwave output from the magnetron, wherein based on a result of comparing a signal, which is obtained by adding an output from the detector to an AC component of a current detected from an output of the high voltage power supply, with a setting value of the output of the high voltage power supply, the output of the high voltage power supply is adjusted.
Claims12
A plasma processing method for processing a wafer arranged in a processing chamber inside of which a plasma is generated using microwave, the plasma processing method comprising:
- supplying a high voltage power from a high voltage power supply to a magnetron;
- generating the microwave using the magnetron;
- supplying process gas into the processing chamber;
- generating the plasma inside the processing chamber by using the exited process gas by the microwave propagated into the processing chamber;
- wherein supplying a high voltage power further comprises:
- detecting a microwave output from the magnetron;
- detecting an AC component current in the high voltage power supplied to the magnetron;
- comparing a first signal indicating a predetermined setting value for the high voltage power with a second signal which is obtained by adding the signal indicating the microwave output from the magnetron to the signal indicating the AC component current in the high voltage power, and
- adjusting the high voltage power supplied to the magnetron using a result of the step of comparing the first and second signals.
Dependencies are inferred from the claim text.