Method and system for a pseudo-differential low-noise amplifier at KU-band

A method for communication, the method comprising:

• in a low-noise amplifier (LNA) integrated on a semiconductor die, the LNA comprising first and second transistors and embedded inductors integrated on the semiconductor die,
• amplifying a radio frequency (RF) signal, wherein the embedded inductors comprise:
• a first inductor with a first terminal capacitively-coupled to a gate terminal of the first transistor and with a second terminal coupled to second, third, and fourth inductors, wherein the second inductor is coupled to a source terminal of the first transistor, the fourth inductor is coupled to a source terminal of the second transistor, and the third inductor is capacitively-coupled to a gate terminal of the second transistor.

A semiconductor device comprising:

• a low-noise amplifier (LNA) integrated on a complementary metal-oxide semiconductor (CMOS) die, the LNA comprising first and second transistors and embedded inductors integrated on the semiconductor die, wherein the embedded inductors comprise:
• a first inductor with a first terminal capacitively-coupled to a gate terminal of the first transistor and with a second terminal coupled to second, third, and fourth inductors, wherein the second inductor is coupled to a source terminal of the first transistor, the fourth inductor is coupled to a source terminal of the second transistor, the third inductor is capacitively-coupled to a gate terminal of the second transistor, and wherein a differential output of the LNA is provided at drain terminals of cascode transistors coupled to drain terminals of the first and second transistors.