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US 10,651,414 B2Granted
Method of manufacturing metal nanowire and light-transmitting electrode and organic light-emitting device including metal nanowire manufactured thereby
AssigneeDuksan Hi-Metal Co., Ltd.
InventorsYoung Zo Yoo, Yoon Soo Choi, Yeong Jin Lim
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Abstract
A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle (α) between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0°<α<180°.
Claims16
A method of manufacturing a metal nanowire, comprising:
- preparing a reaction mixture by mixing a metal salt, a reducible solvent for reducing the metal salt into a metal, a capping agent for growing the metal into a wire, and a catalyst;
- and
- synthesizing a metal nanowire including a plurality of wire parts having different diameters in a single nanowire by reacting the reaction mixture at 1 to 5 atm in a reactor for 3 to 12 hours,
- wherein the synthesized metal nanowire includes a first wire part having a first diameter and a second wire part having a second diameter which is two times to fifteen times as great as the first diameter, and the second wire part is formed by increasing a diameter due to growth of side-surfaces while synthesizing the metal nanowire.
1 more element
Dependencies are inferred from the claim text.