Memory devices and methods of forming the same

Abstract

In a non-limiting embodiment, a device may be formed having a substrate that has at least a first region. A base dielectric layer is arranged over the substrate. The base dielectric layer includes an interconnect in the first region. A first electrode is arranged over the interconnect in the first region. A mask structure is arranged over the first electrode. At least one spacer stack is arranged at least partially around the mask structure and the first electrode. The spacer stack(s) includes a resistive switching element at least partially lining sidewalls of the mask structure and the first electrode, and a second electrode arranged over the resistive switching element.

Dependencies are inferred from the claim text.