Resistive random-access memory
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu
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Abstract
Techniques for fabricating a volatile memory structure having a transistor and a memory component is described. The volatile memory structure comprises the memory component formed on a substrate, wherein a first shape comprising one or more pointed edges is formed on a first surface of the memory component. The volatile memory structure further comprises transistor formed on the substrate and electrically coupled to the memory component to share operating voltage, wherein operating voltage applied to the transistor flows to the memory component.
Claims16
A device, comprising:
- a memory component formed on a substrate, wherein a first shape is formed on a first top surface of the memory component, wherein the first shape is a “V” shaped faceted edge having a plurality of pointed edges;
- and
- a transistor formed on the substrate and electrically coupled to the memory component to share operating voltage, wherein operating voltage applied to the transistor flows to the memory component.
A device, comprising:
- a memory component formed on a substrate, wherein a first shape comprising one or more pointed edges is formed on a first top surface of the memory component;
- and
- a transistor formed on the substrate and electrically coupled to the memory component to share operating voltage, wherein operating voltage applied to the transistor flows to the memory component;
- and
- a dielectric layer that covers the memory component and the transistor.
A device, comprising:
- a memory component formed on a substrate, wherein a first shape comprising one or more pointed edges is formed on a first top surface of the memory component;
- a transistor formed on the substrate and electrically coupled to the memory component to share operating voltage, wherein operating voltage applied to the transistor flows to the memory component;
- a dielectric layer that covers the memory component and the transistor;
- and
- a metal gate that covers the dielectric layer.
Dependencies are inferred from the claim text.