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US 10,651,377 B2Granted
Storage element, storage device, method for manufacturing the same and driving method
AssigneesBeijing Boe Display Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsRuiyong Wang, Lianjie Qu, Ruizhi Yang, Yang You
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Abstract
The present disclosure provides a storage element, a storage device, a method for manufacturing the same and a driving method. The method for manufacturing the storage element includes: providing a substrate; preparing a thin film transistor on the substrate; and preparing a storage functional pattern by using a phase change material, in which the storage functional pattern is connected to a drain electrode of the thin film transistor.
Claims20
A method for manufacturing a storage element, comprising steps of:
- providing a substrate;
- preparing a thin film transistor on the substrate;
- and
- preparing a storage functional pattern by using a phase change material, wherein the storage functional pattern is connected to a drain electrode of the thin film transistor,
- wherein the storage element, comprises:
- a thin film transistor comprising a source electrode, a drain electrode, and an insulating layer covering the source electrode and the drain electrode, the insulating layer having a via hole exposing the drain electrode;
- and
- a storage functional pattern formed of a phase change material, wherein the storage functional pattern is connected to a drain electrode of the thin film transistor through the via hole of the insulating layer, and the storage functional pattern comprises a part of the storage functional pattern formed in the via hole and being directly in physical contact with the drain electrode of the thin film transistor.
5 more elements
A storage element, comprising:
- a thin film transistor comprising a source electrode, a drain electrode, and an insulating layer covering the source electrode and the drain electrode, and the insulating layer having a via hole exposing the drain electrode;
- and
- a storage functional pattern formed of a phase change material, wherein the storage functional pattern is connected to a drain electrode of the thin film transistor through the via hole of the insulating layer, and the storage functional pattern comprises a part of the storage functional pattern formed in the via hole and being directly in physical contact with the drain electrode of the thin film transistor.
Dependencies are inferred from the claim text.