Method of manufacturing a memory device
AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, STMicroelectronics (Crolles 2) SAS
InventorsSophie Bernasconi, Christelle Charpin-Nicolle, Aomar Halimaoui
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Abstract
The present invention relates to a memory device comprising a first electrode (27), a second electrode (28) and an active portion that can change conductive state, positioned between a first face of the first electrode (27) and a first face of the second electrode (28). The first electrode (27) comprises an upper portion forming the first face of the first electrode (27). At least one out of the upper portion and the active portion that can change conductive state comprises a porous layer (15).
Claims30
A memory device, comprising:
- a first electrode,
- a second electrode and
- an active portion for changing a conductive state,
- wherein the active portion is positioned between a first face of the first electrode and a first face of the second electrode,
- the first electrode comprises an upper portion forming the first face of the first electrode,
- at least one of the upper portion and the active portion comprises a porous layer, and
- the porous layer is obtained from p- or n-doped silicon.
Dependencies are inferred from the claim text.