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US 10,651,375 B2Granted
Memory cells, semiconductor devices including the memory cells, and methods of operation
AssigneeMicron Technology, Inc.
InventorsTimothy A. Quick, Eugene P. Marsh, Stefan Uhlenbrock, Chet E. Carter, Scott E. Sills
Life of this patent
Estimating the term…
Abstract
Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.
Claims22
A memory cell, comprising:
- an ion-source material adjacent a cell material;
- and
- a discontinuous interfacial material between the cell material and the ion-source material, the discontinuous interfacial material comprising atoms adherent to the cell material and adjacent atoms of the discontinuous interfacial material spaced by a distance greater than or equal to a diameter of ions of the ion-source material.
A semiconductor device, comprising:
- memory cells, at least one memory cell of the memory cells comprising:
- an ion-source material over a cell material;
- and
- a discontinuous interfacial material between the cell material and the ion-source material, the discontinuous interfacial material comprising interfacial complexes spaced apart by a distance greater than or equal to a diameter of ions of the ion-source material and the interfacial complexes comprising a partial monolayer of the discontinuous interfacial material.
1 more element
A method of operating a semiconductor device comprising:
- applying a voltage to a semiconductor device comprising memory cells, at least one of the memory cells comprising an ion-source material over a cell material;
- and
- diffusing ions from the ion-source material through a discontinuous interfacial material between the cell material and the ion-source material to form at least one conductive path between a first electrode and the ion-source material, the discontinuous interfacial material comprising atoms adherent to the cell material, adjacent atoms of the discontinuous interfacial material spaced by a distance greater than or equal to a diameter of the ions of the ion-source material, and the discontinuous interfacial material comprising a thickness of only one adherent atom.
Dependencies are inferred from the claim text.