Perpendicular magnetic tunnel junction retention and endurance improvement

A magnetic random access memory element, comprising:

• a magnetic reference layer;
• a magnetic free layer;
• and
• a non-magnetic barrier layer disposed between the magnetic reference layer and the magnetic free layer;
• wherein the magnetic free layer comprises:
• a first magnetic layer;
• a second magnetic layer;
• a spacer layer located between the first magnetic layer and the second magnetic layer, the spacer layer comprising a layer of Hf in contact with the first magnetic layer and a layer of W in contact with the second magnetic layer;
• wherein each of the layer of Hf and the layer of W have a thickness of 1-6 Angstroms.

A magnetic random access memory system, comprising:

• a memory element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the magnetic reference layer and the magnetic free layer;
• and
• circuitry electrically connected with the memory element, the circuitry being functional to supply a current to the magnetic element to write a data bit to the magnetic memory element and to measure an electrical resistance of the memory element to read a data bit from the memory element;
• wherein the magnetic free layer further comprises:
• first and second magnetic layers and a spacer layer located between the first and second magnetic layers, the spacer layer comprising a layer of Hf in contact with the first magnetic layer and a layer of W in contact with the layer of Hf and also in contact with the second magnetic layer;
• wherein each of the layer of Hf and the layer of W have a thickness of 1-6 Angstroms.