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US 10,651,366 B2Granted
Spin current magnetization reversal element and magnetic memory
AssigneeTDK Corporation
InventorsYohei Shiokawa, Tomoyuki Sasaki
Life of this patent
Estimating the term…
Abstract
A spin flow magnetization reversal element includes a first ferromagnetic metal layer capable of changing a direction of magnetization; and a spin orbit torque wiring layer joined to the first ferromagnetic metal layer and extending in a direction intersecting a direction perpendicular to a plane of the first ferromagnetic metal layer. The spin orbit torque wiring layer includes at least one light element L among B, C, Si and P and at least one noble gas element among Ar, Kr and Xe.
Claims18
A spin current magnetization reversal element, comprising:
- a first ferromagnetic metal layer capable of changing a direction of magnetization;
- and
- a spin orbit torque wiring layer joined to the first ferromagnetic metal layer and extending in a direction intersecting a direction perpendicular to a plane of the first ferromagnetic metal layer,
- wherein the spin orbit torque wiring layer includes at least one light element selected from a group consisting of B, C, Si and P and at least one noble gas element selected from a group consisting of Ar, Kr and Xe.
1 more element
Dependencies are inferred from the claim text.