Method of forming superconducting apparatus including superconducting layers and traces

A method comprising:

• forming a first dielectric layer on a substrate by depositing a first dielectric material on the substrate and curing the first dielectric material at a first temperature;
• forming a first niobium layer comprising a first set of patterned niobium traces on the first dielectric layer;
• forming a second dielectric layer on the first niobium layer by depositing a second dielectric material on the first niobium layer and curing the second dielectric material at a second temperature, wherein the second temperature is approximately equal to or lower than the first temperature by at least 25 degrees Centigrade, and wherein each of the first dielectric material and the second dielectric material comprises a photo-imageable polyimide;
• and
• forming a second niobium layer comprising a second set of patterned niobium traces on the second dielectric layer, wherein each of the first set of patterned niobium traces and the second set of patterned niobium traces is formed using proximity lithography, and wherein each of the first temperature and the second temperature is selected to be below 275 degrees Centigrade.

A method comprising:

• forming a first dielectric layer on a substrate by spinning on polyimide on the substrate and curing the polyimide at a first temperature;
• forming a first niobium layer comprising a first set of patterned niobium traces on the first dielectric layer;
• forming a second dielectric layer on the first niobium layer by spinning on photo-imageable polyimide on the first niobium layer and curing the photo-imageable polyimide at a second temperature, wherein the second temperature is lower than the first temperature;
• forming a second niobium layer comprising a second set of patterned niobium traces on the second dielectric layer;
• and
• forming a third dielectric layer on the second niobium layer by spinning on photo-imageable polyimide on the second niobium layer and curing the photo-imageable polyimide at a third temperature, wherein the third temperature is lower than the second temperature, and wherein each of the first temperature, the second temperature, and the third temperature is selected to not adversely affect the niobium by damaging the niobium.