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US 10,651,345 B2Granted
Light emitting device, light emitting device package including the device, and lighting apparatus including the package
AssigneeLG Innotek Co., Ltd.
InventorsSung Ho Jung, Jin Kyung Choi, Sang Youl Lee
Life of this patent
Estimating the term…
Abstract
A light emitting device includes a substrate; a light emitting structure disposed on the substrate; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; a first electrode and a second electrode electrically connected to the light emitting structure; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode.
Claims20
A light emitting device comprising:
- a substrate;
- a light emitting structure disposed on the substrate;
- a first insulation layer disposed on the light emitting structure;
- a second insulation layer disposed on the first insulation layer;
- a first electrode and a second electrode electrically connected to the light emitting structure;
- a first pad electrically connected to the first electrode;
- and
- a second pad electrically connected to the second electrode,
- wherein the light emitting structure includes a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer,
- wherein the first electrode contacts the first conductivity type semiconductor layer,
- wherein the second electrode includes a contact layer connected to the second conductivity type semiconductor layer, and an extending layer disposed on an uppermost surface of the contact layer,
- wherein the first insulation layer includes an overlapped portion that is vertically overlapped with the extending layer, and an extended portion that is not vertically overlapped with the extending layer,
- wherein a bottom surface the extending layer includes a lowermost surface contacting the uppermost surface of the contact layer, and a lower surface contacting the overlapped portion of the first insulation layer,
- wherein the overlapped portion of the first insulation layer contacts the uppermost surface of the contact layer,
- wherein the extended portion of the first insulation layer contacts the first electrode,
- wherein the second insulation layer includes a first portion that contacts an upper surface of the first electrode, a second portion that contacts an upper surface of the extending layer, and a third portion that contacts an upper surface of the extended portion of the first insulation layer,
- wherein the contact layer of the second electrode, the overlapped portion of the first insulation layer, the extending layer of the second electrode, and the second portion of the second insulation layer are overlapped vertically, and
- wherein the second pad contacts the extending layer of the second electrode.
15 more elements
A light emitting device package comprising:
- a substrate;
- a light emitting structure disposed on the substrate;
- a first electrode and a second electrode electrically connected to the light emitting structure;
- a first insulation layer disposed on the light emitting structure;
- a second insulation layer disposed on the first insulation layer;
- a first electrode and a second electrode electrically connected to the light emitting structure, respectively;
- a first pad electrically connected to the first electrode;
- a second pad electrically connected to the second electrode;
- and
- a phosphor disposed on a lower surface of the substrate,
- wherein the light emitting structure includes a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer,
- wherein the first electrode contacts the first conductivity type semiconductor layer,
- wherein the second electrode includes a contact layer connected to the second conductivity type semiconductor layer, and an extending layer disposed on an uppermost surface of the contact layer,
- wherein the first insulation layer includes an overlapped portion that is vertically overlapped with the extending layer, and an extended portion that is not vertically overlapped with the extended layer,
- wherein a bottom surface of the extending layer includes a lowermost surface contacting the uppermost surface of the contact layer, and a lower surface contacting the overlapped portion of the first insulation layer,
- wherein the overlapped portion of the first insulation layer contacts the uppermost surface of the contact layer,
- wherein the extended portion of the first insulation layer contacts the first electrode,
- wherein the second insulation layer includes a first portion that contacts an uppermost surface of the first electrode, a second portion that contacts an uppermost surface of the extending layer, and a third portion that contacts an upper surface of the extended portion of the first insulation layer,
- wherein the contact layer of the second electrode, the overlapped portion of the first insulation layer, the extending layer of the second electrode, and the second portion of the second insulation layer are overlapped vertically, and
- wherein the second pad contacts the extending layer of the second electrode.
17 more elements
A light emitting device comprising:
- a substrate;
- a light emitting structure disposed on the substrate;
- a first insulation layer disposed on the light emitting structure;
- a second insulation layer disposed on the first insulation layer;
- a third insulation layer disposed on the second insulation layer;
- a first electrode and a second electrode electrically connected to the light emitting structure;
- a first pad electrically connected to the first electrode;
- and
- a second pad electrically connected to the second electrode, wherein the light emitting structure includes a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer,
- wherein the first electrode contacts the first conductivity type semiconductor layer,
- wherein the second electrode includes a contact layer connected to the second conductivity type semiconductor layer, and an extending layer disposed on an uppermost surface of the contact layer,
- wherein the first insulation layer contacts the light emitting structure and the second insulation layer,
- wherein the second insulation layer includes an overlapped portion that is vertically overlapped with the extending layer, and an extended portion that is not vertically overlapped with the extending layer,
- wherein a bottom surface of the extending layer includes a lowermost surface contacting the uppermost surface of the contact layer, and a lower surface contacting the overlapped portion of the second insulation layer,
- wherein the overlapped portion of the second insulation layer overlaps the contact layer of the second electrode, and the extending layer of the second electrode,
- wherein the overlapped portion of the second insulation layer contacts the uppermost surface of the contact layer of the second electrode, and a lower surface of the extending layer of the second electrode,
- wherein the third insulation layer includes a first portion that contacts an upper surface of the first electrode, a second portion that contacts an upper surface of the extending layer, and a third portion that contacts an upper surface of the extended portion of the second insulation layer, and
- wherein the contact layer of the second electrode, the overlapped portion of the second insulation layer, the extending layer of the second electrode, and the second portion of the third insulation layer are overlapped vertically.
15 more elements
Dependencies are inferred from the claim text.