Integration of III-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices
AssigneeKing Abdullah University of Science and Technology
InventorsBoon S. Ooi, Aditya Prabaswara, Bilal Janjua, Tien Khee Ng
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Abstract
A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.
Claims7
A method of manufacturing a transparent light emitting device, said method including:
- providing an optically transparent substrate;
- depositing a transparent or semitransparent metallic interlayer, including subsequent plasma exposure to yield wavelength dependent transparency;
- forming by high-temperature epitaxy a nanowire heterostructure on the transparent substrate using a plurality of InGaN quantum disks, with said forming including spacing apart individual nanowire structures to maintain transparency of the light emitting device through said transparent substrate, metallic interlayer, and nanowire heterostructure;
- forming a transparent metal contact atop of the nanowire heterostructure, with device transparency maintained across said substrate, interlayer, nanowire heterostructure and metal contact;
- and
- forming a P-contact pad atop of the transparent metal contact and a N-contact pad atop of the metallic interlayer.
Dependencies are inferred from the claim text.