Optoelectronic semiconductor chip
AssigneeOSRAM OLED GmbH
InventorsRoland Zeisel, Michael Binder, Jens Ebbecke, Tobias Meyer
Life of this patent
Estimating the term…
Abstract
An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.
Claims18
An optoelectronic semiconductor chip comprising:
- a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and second semiconductor structures;
- and
- at least 1000 recesses, each recess penetrating at least one of the semiconductor structures and the active region,
- wherein a cover surface of the active region is a continuous surface,
- wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material,
- wherein the recesses are arranged over an entire surface of a first or second semiconductor structure in a lateral plane at regular intervals, and
- wherein the semiconductor body comprises a via completely penetrating the second semiconductor structure and the active region perpendicular to its main extension plane.
A optoelectronic semiconductor chip comprising:
- a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and second semiconductor structures;
- and
- at least 1000 recesses, each recess penetrating at least one of the semiconductor structures and the active region,
- wherein a cover surface of the active region is a continuous surface,
- wherein the active region comprises a plurality of five or more quantum well structures,
- wherein, at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material,
- wherein the recesses are arranged over an entire surface of a first or second semiconductor structure in a lateral plane at regular intervals, and
- wherein the semiconductor body comprises a via completely penetrating the second semiconductor structure and the active region perpendicular to its main extension plane.
An optoelectronic semiconductor chip comprising:
- a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and second semiconductor structures;
- and
- a plurality of recesses, each recess penetrating at least one of the first or second semiconductor structures and the active region,
- wherein a cover surface of the active region is a continuous surface,
- wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material,
- wherein an area fraction in which the active region is penetrated by recesses is at least 10% and at most 20% of an area of the active region, and
- wherein the semiconductor body comprises a via completely penetrating the second semiconductor structure and the active region perpendicular to its main extension plane.
Dependencies are inferred from the claim text.