Optoelectronic device and method for manufacturing same

A method of manufacturing an optoelectronic device comprising forming first and second active regions capable of emitting or receiving an electromagnetic radiation made of at least one first semiconductor material mainly comprising a first compound selected from III-V compounds, II-VI compounds, and mixtures thereof, the first active regions having a first polarity and the second active regions having a second polarity different from the first polarity,

• wherein the method comprises the steps of:
• forming, on a substrate, third portions of a third semiconductor material having a third polarity and fourth portions of the third semiconductor material having a fourth polarity different from the third polarity, the third material being a nitride, a carbide, or a boride of a transition metal of column IV, V, or VI, or a combination of these compounds;
• forming on the third portions first semiconductor portions of a second semiconductor material mainly comprising the first compound and having the first polarity and, on the fourth portions, second semiconductor portions of the second semiconductor material having the second polarity;
• and
• growing by simultaneous epitaxy the first active regions in contact with the first semiconductor portions and the second active regions in contact with the second semiconductor portions.