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US 10,651,340 B2Granted
Reducing or eliminating nanopipe defects in III-nitride structures
AssigneeLumileds LLC
InventorsPatrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
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Abstract
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
Claims12
A device comprising:
- a III-nitride light emitting layer disposed between an n-type region and a type region;
- and
- a nanopipe termination structure comprising a first III-nitride layer doped with an acceptor and a second III-nitride layer doped with an acceptor, the first and second III-nitride layers doped with an acceptor having different concentrations of acceptor, the n-type region being disposed between the nanopipe termination structure and the III-nitride light emitting layer.
A device comprising:
- a III-nitride light emitting layer disposed between an n-type region and a p-type region;
- a III-nitride layer comprising a nanopipe defect;
- and
- a nanopipe terminating layer that is not intentionally doped disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect, wherein the nanopipe terminates in the nanopipe terminating layer.
1 more element
Dependencies are inferred from the claim text.