Supporting substrate for semiconductor device, semiconductor apparatus comprising the same, and method for manufacturing the same

A method for manufacturing a semiconductor light emitting apparatus including a first substrate having a first face and a second face opposite to the first face, a groove in a direction from the first face to the second face and a conducting part in the groove, and a semiconductor light emitting chip bonded to the first substrate, the method comprising:

• bonding a second substrate made of sapphire to the first face of the first substrate via a bonding layer made of a light reactive material, the first substrate composed of one of a ceramic material, an Al2O3 crystal, an AlN crystal, HTCC, LTCC, an Al2O3 mixture or ceramic material, an Al2O3—ZrO2 mixture or ceramic material, and an AlN mixture or ceramic material;
• bonding a plurality of semiconductor light emitting chips including the semiconductor light emitting chip to the second face of the first substrate in such a manner that the semiconductor light emitting chip is electrically communicated with the conducting part, with the semiconductor light emitting chip having a third substrate made of Al2O3, in which the second substrate is located opposite the plurality of semiconductor light emitting chips with respect to the first substrate;
• separating the second substrate from the first substrate by removing the bonding layer with an optical method;
• and
• cutting the first substrate in such a manner that the semiconductor light emitting chip is included,
• wherein the third substrate and the first substrate differ in thermal expansion coefficient by 2 ppm or less.