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US 10,651,332 B2Granted
SPAD photodiode
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorNorbert Moussy
Life of this patent
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Abstract
A SPAD-type photodiode including: a semiconductor substrate of a first conductive type having a front side and a back side; and a first semiconductor region of the second conductivity type extending in the substrate from the front side thereof and towards the back side thereof, the lateral surfaces of the first region being in contact with the substrate and the junction between the lateral surfaces of the first region and the substrate defining an avalanche area of the photodiode.
Claims13
A SPAD-type photodiode comprising:
- a semiconductor substrate of a first conductivity type having a front side and a back side;
- a first semiconductor region of the second conductivity type extending in the substrate from the front side thereof and towards the back side thereof, the lateral surfaces of the first region being in contact with the substrate and the junction between the lateral surfaces of the first region and the substrate defining an avalanche area of the photodiode;
- and
- a first semiconductor layer coating the back side of the substrate, the first region thoroughly crossing the substrate and stopping in the first layer, the first layer being doped with the second conductivity type.
1 more element
Dependencies are inferred from the claim text.