Complementary metal-oxide semiconductor compatible patterning of superconducting nanowire single-photon detectors

A method, comprising:

• obtaining a first device with:
• a first semiconductor layer;
• a portion of a second semiconductor layer disposed on the first semiconductor layer;
• a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer, wherein a thickness of the first region of the third semiconductor layer is less than a first predefined thickness;
• an etch stop layer disposed on the third semiconductor layer;
• and
• a fourth semiconductor layer disposed on the etch stop layer, wherein a thickness of the fourth semiconductor layer is at least a second predefined thickness.

A method, comprising:

• obtaining a device with:
• a first semiconductor layer;
• a portion of a second semiconductor layer disposed on the first semiconductor layer;
• a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer, wherein a thickness of the first region of the third semiconductor layer is less than a first predefined thickness;
• an etch stop layer disposed on the third semiconductor layer;
• and
• a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer, wherein a thickness of the fourth semiconductor layer is at least a second predefined thickness;
• and
• depositing a superconducting layer on the fourth semiconductor layer to form a plurality of distinct portions of the superconducting layer disposed respectively on the plurality of distinct portions of the fourth semiconductor layer and on the one or more distinct exposed portions of the etch stop layer.