Devices and methods featuring the addition of refractory metals to contact interface layers

A method comprising:

• forming a sputtering target comprising a contact interface material, a dopant, and a non-oxide compound of a gettering metal;
• depositing the sputtering target on to a CdTe device layer to form a contact interface layer comprising the contact interface material, the dopant and the non-oxide compound of the gettering material;
• and
• depositing an outer metallization layer comprising the gettering metal to the contact interface layer;
• wherein:
• the dopant diffuses into the CdTe device layer causing the CdTe device layer to become p-type,
• the gettering metal diffuses into the contact interface layer from the outer metallization layer, and
• the non-oxide compound of the gettering metal diffuses into the CdTe device layer.