Back to results
US 10,651,319 B2Granted
Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereof
AssigneeSTMicroelectronics S.r.l.
InventorsMario Giuseppe Saggio, Simone Rascuna'
Life of this patent
Estimating the term…
Abstract
A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.
Claims19
A method of manufacturing a device, comprising:
- forming, in a semiconductor body having a front surface and a first conductivity type, a first buried semiconductor region, having a second conductivity type different than the first conductivity type;
- after forming the first buried semiconductor region, etching an opening through the semiconductor body from the first surface to the buried semiconductor region;
- and
- forming a first conductive contact in the opening, the first conductive contact extending from the front surface of the semiconductor body to the first buried semiconductor region.
1 more element
A method of manufacturing a device, comprising:
- doping a semiconductor layer with a first dopant;
- masking a first surface of the semiconductor layer with a mask, the mask having a first window;
- doping a first buried region of the semiconductor layer through the first window with a second dopant having a different doping type than the first dopant;
- forming a first contact extending from the first surface of the semiconductor layer to the first buried region;
- and
- thermally reacting the first contact to form a silicide.
3 more elements
A method of manufacturing a device, comprising:
- doping a semiconductor layer with a first dopant;
- masking a first surface of the semiconductor layer with a mask, the mask having a first window;
- doping a first buried region of the semiconductor layer through the first window with a second dopant having a different doping type than the first dopant;
- forming a first contact extending from the first surface of the semiconductor layer to the first buried region;
- and
- growing an epitaxial layer on a temporary surface of the semiconductor layer, the first buried region being at the temporary surface, the epitaxial layer having a first surface and a second surface, the first surface of the epitaxial layer being on the temporary surface and the second surface of the epitaxial layer being the first surface of the semiconductor layer.
3 more elements
Dependencies are inferred from the claim text.