Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo Shimizu
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Abstract
A semiconductor device according to an embodiment includes a first electrode; a second electrode; a silicon carbide layer disposed between the first electrode and the second electrode; a first n-type silicon carbide region disposed in the silicon carbide layer; and a first nitrogen region disposed in the silicon carbide layer, the first nitrogen region disposed between the first n-type silicon carbide region and the first electrode, and the first nitrogen region having a first nitrogen concentration higher than a first n-type impurity concentration of the first n-type silicon carbide region.
Claims17
A semiconductor device, comprising:
- a Schottky barrier diode including:
- a first electrode;
- a second electrode;
- a silicon carbide layer disposed between the first electrode and the second electrode, the silicon carbide layer being in direct contact with the first electrode;
- a first n-type silicon carbide region disposed in the silicon carbide layer;
- and
- a first nitrogen region disposed in the silicon carbide layer, the first nitrogen region disposed between the first n-type silicon carbide region and the first electrode, and the first nitrogen region having a first nitrogen concentration higher than a first n-type impurity concentration of the first n-type silicon carbide region.
Dependencies are inferred from the claim text.