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US 10,651,312 B2Granted
Flexible thin film transistor and method for fabricating the same
AssigneeShenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorXiang Liu
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Abstract
A flexible thin film transistor and a method for fabricating the same are provided. The flexible thin film transistor has: a flexible substrate; an inorganic insulating layer disposed on the flexible substrate; and a thin film transistor disposed on the inorganic insulating layer. A rough structure is formed on a side surface of the inorganic insulating layer facing toward the thin film transistor.
Claims8
A flexible thin film transistor, comprising:
- a flexible substrate;
- an inorganic insulating layer disposed on the flexible substrate;
- and
- a thin film transistor disposed on the inorganic insulating layer,
- wherein a side surface of the inorganic insulating layer has a rough surface facing toward the thin film transistor;
- wherein a thickness of the inorganic insulating layer ranges from 3000 Å to 8000 Å;
- and
- wherein the inorganic insulating layer is formed of oxides, nitrides, or nitrogen oxides.
5 more elements
A flexible thin film transistor, comprising:
- a flexible substrate;
- an inorganic insulating layer disposed on the flexible substrate;
- and
- a thin film transistor disposed on the inorganic insulating layer,
- wherein a rough surface is formed on a side surface of the inorganic insulating layer facing toward the thin film transistor, and
- wherein a thickness of the inorganic insulating layer ranges from 3000 Å to 8000 Å.
3 more elements
Dependencies are inferred from the claim text.