V-shape recess profile for embedded source/drain epitaxy
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChii-Horng Li, Chih-Shan Chen, Roger Tai, Yih-Ann Lin, Yen-Ru Lee, Tzu-Ching Lin
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Abstract
A semiconductor device includes a semiconductor base. A dielectric isolation structure is formed in the semiconductor base. A source/drain of a FinFET transistor is formed on the semiconductor base. A bottom segment of the source/drain is embedded into the semiconductor base. The bottom segment of the source/drain has a V-shaped cross-sectional profile. The bottom segment of the source/drain is separated from the dielectric isolation structure by portions of the semiconductor base.
Claims20
A semiconductor device, comprising:
- a semiconductor material;
- a source/drain of a transistor disposed over the semiconductor material;
- a first dielectric structure disposed over the semiconductor material;
- a first void disposed between the first dielectric structure and the source/drain;
- and
- a second void disposed between the semiconductor material and the source/drain.
A semiconductor device, comprising:
- a semiconductor material;
- a source/drain component of a transistor located over the semiconductor material;
- a first dielectric isolation structure that protrudes downwardly into the semiconductor material in a cross-sectional side view, wherein the first dielectric isolation structure overlap with the source/drain component in a plan view;
- and
- an air gap located between the first dielectric isolation structure and the source/drain component.
A semiconductor device, comprising:
- a semiconductor material;
- a component of a transistor disposed over the semiconductor material, wherein the component includes a plurality of downwardly protruding portions that each has a V-shaped profile in a cross-sectional view, wherein the component includes a source of the transistor or a drain of the transistor;
- a plurality of dielectric structures embedded in the semiconductor material, wherein each of the dielectric structures is disposed between a respective subset of the downwardly protruding portions of the component in the cross-sectional view;
- and
- a plurality of voids formed between the dielectric structures and the component.
Dependencies are inferred from the claim text.