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US 10,651,305 B2Granted
Compound semiconductor device with quantum well structure, power supply device, and high-frequency amplifier
AssigneeFujitsu Limited
InventorsJunji Kotani, Norikazu Nakamura, Hisao Shigematsu
Life of this patent
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Abstract
A compound semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, a channel layer formed over the compound semiconductor layer, an electron supply layer formed over the channel layer, and a source electrode, a drain electrode, and a gate electrode that are formed apart from each other over the electron supply layer. A quantum well structure is formed by the compound semiconductor layer, the channel layer, and the electron supply layer.
Claims13
A compound semiconductor device, comprising:
- a substrate;
- a buffer layer that is a compound semiconductor layer formed over the substrate;
- a channel layer formed over the buffer layer;
- an electron supply layer formed over the channel layer;
- and
- a source electrode, a drain electrode, and a gate electrode that are formed apart from each other over the electron supply layer, wherein
- a quantum well structure is formed by the buffer layer, the channel layer, and the electron supply layer;
- and
- an energy difference between a ground level and a second excited level of an electron in the channel layer is greater than an optical phonon energy of the channel layer.
6 more elements
A power supply device, comprising:
- a compound semiconductor device that includes
- a substrate,
- a buffer layer that is a compound semiconductor layer formed over the substrate,
- a channel layer formed over the buffer layer,
- an electron supply layer formed over the channel layer, and
- a source electrode, a drain electrode, and a gate electrode that are formed apart from each other over the electron supply layer, wherein
- a quantum well structure is formed by the buffer layer, the channel layer, and the electron supply layer;
- and
- an energy difference between a ground level and a second excited level of an electron in the channel layer is greater than an optical phonon energy of the channel layer.
6 more elements
A high-frequency amplifier, comprising:
- a compound semiconductor device that includes
- a substrate,
- a buffer layer that is a compound semiconductor layer formed over the substrate,
- a channel layer formed over the buffer layer,
- an electron supply layer formed over the channel layer, and
- a source electrode, a drain electrode, and a gate electrode that are formed apart from each other over the electron supply layer,
- wherein a quantum well structure is formed by the buffer layer, the channel layer, and the electron supply layer;
- and
- an energy difference between a ground level and a second excited level of an electron in the channel layer is greater than an optical phonon energy of the channel layer.
6 more elements
Dependencies are inferred from the claim text.