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US 10,651,303 B2Granted
High-electron-mobility transistor devices
AssigneeVishay-Siliconix
InventorsAyman Shibib, Kyle Terrill
Life of this patent
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Abstract
A device includes a first high electronic mobility transistor (HEMT) and a second HEMT. The first HEMT includes a first gate, a source coupled to the first gate, and a drain coupled to the first gate. The second HEMT includes a second gate coupled to the source and to the drain. The second HEMT has a lower threshold voltage than the first HEMT.
Claims12
A method for fabricating a high electron mobility transistor (HEMT) device, the method comprising:
- forming a first HEMT on a substrate, the first HEMT comprising a first gate, a source coupled to the first gate, and a drain coupled to the first gate, wherein the first gate comprises a first contact and is disposed on a layer comprising gallium;
- forming a second HEMT on the substrate, the second HEMT comprising a second gate coupled to the source and to the drain, wherein the second gate comprises a second contact and is disposed on the layer comprising gallium;
- depositing a first concentration of dopant in the first gate to form a first doped region between the first contact and the layer comprising gallium;
- and
- depositing a second concentration of dopant in the second gate to form a second doped region between the second contact and the layer comprising gallium;
- wherein the second concentration is less than the first concentration;
- and
- wherein the second HEMT has a lower threshold voltage than the first HEMT.
5 more elements
A method for fabricating a high electron mobility transistor (HEMT) device, the method comprising:
- forming a first HEMT on a substrate, the first HEMT comprising a first gate, a source coupled to the first gate, and a drain coupled to the first gate, wherein the first gate is disposed on a layer comprising gallium, and wherein said forming the first HEMT comprises:
- prior to said forming the first gate, implanting a first dose of an implant material to form a first implant region in the layer comprising gallium, wherein the first gate is then formed over the first implant region;
- and
- forming a second HEMT on the substrate, the second HEMT comprising a second gate coupled to the source and to the drain, wherein the second gate is disposed on a layer comprising gallium, and wherein said forming the second HEMT comprises:
- prior to forming the second gate, implanting a second dose of the implant material to form a second implant region in the layer comprising gallium, wherein the second gate is then formed over the second implant region;
- wherein the second dose is less than the first dose;
- and
- wherein the second HEMT has a lower threshold voltage than the first HEMT.
5 more elements
A method for fabricating a high electron mobility transistor (HEMT) device, the method comprising:
- forming a first HEMT on a substrate, the first HEMT comprising a first gate, a source coupled to the first gate, and a drain coupled to the first gate, wherein the first gate is disposed on a layer comprising gallium, and wherein said forming the first HEMT comprises:
- prior to forming the first gate, forming a first recess in the layer comprising gallium;
- and
- forming a first insulator in and extending from the first recess so that the first insulator has a first thickness and is at least partially embedded in the layer comprising gallium, wherein the first gate is then formed over the first insulator;
- and
- forming a second HEMT on the substrate, the second HEMT comprising a second gate coupled to the source and to the drain, wherein the second gate is disposed on a layer comprising gallium, and wherein said forming the second HEMT comprises:
- prior to forming the second gate, forming a second recess in the layer comprising gallium;
- and
- forming a second insulator in and extending from the second recess so that the second insulator has a second thickness and is at least partially embedded in the layer comprising gallium, wherein the second gate is then formed over the second insulator;
- wherein the second thickness is less than the first thickness;
- and
- wherein the second HEMT has a lower threshold voltage than the first HEMT.
9 more elements
Dependencies are inferred from the claim text.