Methods of fabricating Fin Field Effect Transistor (FinFET) devices with uniform tension using implantations on top and sidewall of Fin
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Han Wu, Tong-Min Weng, Chun-Yi Huang, Po-Ching Lee, Chih-Hsuan Hsieh, Shu-Ching Tsai
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Abstract
Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.
Claims20
A method of fabricating a Fin Field Effect Transistor (FinFET) device, comprising:
- forming a fin over a substrate;
- implanting a first dopant on a top surface of the fin;
- implanting a second dopant on a sidewall surface of the fin, wherein the first dopant is different from the second dopant;
- forming an oxide layer on the top surface and the sidewall surface of the fin, wherein the oxide layer is formed using a thermal oxidation process, and the first dopant and the second dopant in the fin are activated by the thermal oxidation process;
- and
- forming a gate electrode layer over the oxide layer.
A method of fabricating a Fin Field Effect Transistor (FinFET) device, comprising:
- forming a fin over a substrate;
- implanting an oxidation inhibitor dopant on a top surface of the fin;
- implanting an oxidation accelerator dopant on a sidewall surface of the fin, wherein the oxidation accelerator dopant comprises oxygen (O);
- forming an oxide layer on the top surface and the sidewall surface of the fin;
- forming a gate electrode layer over the oxide layer;
- and
- forming a source region and a drain region in the fin and at opposite sides of the gate electrode layer.
A method of fabricating a Fin Field Effect Transistor (FinFET) device, comprising:
- forming a fin over a substrate;
- implanting a tension reduction dopant on a top surface of the fin;
- implanting a tension increase dopant on a sidewall surface of the fin;
- applying a first thermal treatment to activate the tension reduction dopant and the tension increase dopant in the fin;
- implanting an oxidation inhibitor dopant on the top surface of the fin;
- implanting an oxidation accelerator dopant on the sidewall surface of the fin;
- applying a second thermal treatment to activate the oxidation inhibitor dopant and the oxidation accelerator dopant in the fin;
- forming an oxide layer on the top surface and the sidewall surface of the fin;
- and
- forming a gate electrode layer over the oxide layer.
Dependencies are inferred from the claim text.