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US 10,651,292 B2Granted
Dual metal via for contact resistance reduction
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Liang Cheng, Yen-Yu Chen
Life of this patent
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Abstract
A semiconductor device includes an active region over a substrate; a first cobalt-containing feature disposed over the active region; a conductive cap disposed over and in physical contact with the first cobalt-containing feature; and a second cobalt-containing feature disposed over and in physical contact with the conductive cap.
Claims20
A semiconductor device, comprising:
- an active region over a substrate;
- a first cobalt-containing feature disposed over the active region;
- a conductive cap disposed over and in physical contact with the first cobalt-containing feature;
- a second cobalt-containing feature disposed over and in physical contact with the conductive cap;
- a first barrier layer disposed over sidewalls of the second cobalt-containing feature and the conductive cap, wherein the first barrier layer is in physical contact with the second cobalt-containing feature;
- and
- a second barrier layer disposed over the first barrier layer.
4 more elements
A semiconductor device, comprising:
- a first cobalt-containing plug disposed over a substrate;
- a conductive cap disposed over and in physical contact with the first cobalt-containing plug;
- a second cobalt-containing plug disposed over and in physical contact with the conductive cap, wherein a bottom surface of the second cobalt-containing plug is spaced apart from a top surface of the first cobalt-containing plug;
- a first barrier layer over sidewalls of the second cobalt-containing plug and the conductive cap;
- a second barrier layer over sidewalls of the first barrier layer;
- and
- one or more dielectric layers surrounding the second barrier layer.
4 more elements
A method, comprising:
- providing a structure having a substrate, one or more first dielectric layers over the substrate, a first cobalt-containing plug embedded in the one or more first dielectric layers, and one or more second dielectric layers over the one or more first dielectric layers and the first cobalt-containing plug;
- etching a via hole into the one or more second dielectric layers to expose the first cobalt-containing plug;
- depositing a first barrier layer having silicon nitride into the via hole;
- depositing a second barrier layer having titanium nitride or tantalum nitride into the via hole and over the first barrier layer;
- etching the first and second barrier layers in the via hole to expose the first cobalt-containing plug;
- forming a conductive cap over the first cobalt-containing plug that is exposed in the via hole;
- and
- selectively growing cobalt over the conductive cap.
5 more elements
Dependencies are inferred from the claim text.