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US 10,651,290 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsTe-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang
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Abstract
A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer around the gate structure, performing a curing process so that an oxygen concentration of the CESL is different from the oxygen concentration of the ILD layer, and then performing a replacement metal gate process (RMG) process to transform the gate structure into a metal gate.
Claims10
A method for fabricating semiconductor device, comprising:
- forming a gate structure on a substrate;
- forming a contact etch stop layer (CESL) on the gate structure;
- forming an interlayer dielectric (ILD) layer around the gate structure;
- performing a curing process while the CESL is on the gate structure;
- and
- performing a replacement metal gate process (RMG) process to transform the gate structure into a metal gate.
3 more elements
Dependencies are inferred from the claim text.