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US 10,651,287 B2Granted
Method for forming source/drain contacts
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShahaji B. More, Chun Hsiung Tsai, Shih-Chieh Chang, Kuo-Feng Yu, Cheng-Yi Peng
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Abstract
A semiconductor structure includes a substrate, a semiconductor fin connected to the substrate, an epitaxial layer disposed over the semiconductor fin, and a silicide feature over and in contact with the epitaxial layer. The epitaxial layer including silicon germanium (SiGe) and further includes gallium (Ga) in an upper portion of the epitaxial layer that is in contact with the silicide feature.
Claims20
A method, comprising:
- providing a structure that includes:
- a substrate;
- a semiconductor fin;
- and
- an epitaxial feature over the semiconductor fin, the epitaxial feature including silicon germanium (SiGe);
- doping gallium (Ga) into the epitaxial feature;
- performing a first annealing process at a first temperature;
- depositing a conductive material including a metal over the epitaxial feature after the first annealing process;
- and
- performing a second annealing process at a second temperature to cause reaction between the metal and the epitaxial feature.
7 more elements
A method comprising:
- providing a structure that includes:
- a substrate;
- a gate structure over the substrate;
- and
- an epitaxial feature including silicon germanium (SiGe) adjacent to the gate structure;
- doping gallium (Ga) ions into the epitaxial feature;
- performing a first annealing process at a recrystallization temperature of the SiGe;
- depositing a material including a metal over the epitaxial feature after the first annealing process;
- performing a second annealing process to form a compound having at least Si and the metal over the epitaxial feature;
- and
- performing a third annealing process to activate dopants including Ga in the epitaxial feature.
8 more elements
A method for making a semiconductor structure, comprising:
- providing a substrate, a semiconductor fin connected to the substrate, and an epitaxial layer disposed over the semiconductor fin;
- implanting gallium (Ga) in an upper portion of the epitaxial layer;
- and
- forming a silicide feature over and in contact with the epitaxial layer, wherein the epitaxial layer including silicon germanium (SiGe) and is in contact with the implanted upper portion.
1 more element
Dependencies are inferred from the claim text.