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US 10,651,285 B2Granted
Method for avoiding IL regrown in a HKMG process
AssigneeShanghai Huali Microelectronics Corporation
InventorsYingming Liu, Yu Bao, Haifeng Zhou, Jingxun Fang
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Abstract
The present disclosure addresses and solves the current problem of oxygen accumulation in IL after an HKMG stack is formed. A fabrication method is provided for fabricating high-k/metal gate semiconductor device by forming at least one Titanium (Ti) layer between multiple HK layers. A high-k/metal gate semiconductor device including at least one TiO2 layer between multiple HK layers is also provided.
Claims20
A semiconductor device comprising:
- a substrate comprising silicon material;
- and
- a gate electrode stack formed on the substrate, wherein the gate electrode stack comprising:
- an interfacial layer formed on an upper surface of the substrate;
- a first high-k dielectric layer formed on the interfacial layer;
- a first titanium (Ti) only layer formed on the first high-k dielectric layer;
- a second high-k dielectric layer formed on the first titanium only layer such that the first titanium only layer is not oxidized by a deposition process before the second high-k dielectric layer is formed on the first titanium only layer;
- and wherein the first titanium only layer is oxidized by oxygen from or through the first and the second high-k dielectric layer;
- a third high-k dielectric layer formed on the second high-k dielectric layer;
- a second titanium (Ti) only layer formed on the third high-k dielectric layer;
- and
- a fourth high-k dielectric layer formed on the second titanium only layer such that the second titanium only layer is not oxidized by a deposition process before the fourth high-k dielectric layer is formed on the second titanium only layer;
- and wherein the second titanium only layer is oxidized by oxygen from or through the third and the fourth high-k dielectric layers.
10 more elements
A method for fabricating a high-k metal-gate, the method comprising:
- forming a substrate comprising silicon material;
- and
- forming a gate electrode stack on the substrate, wherein forming the gate electrode stack comprising:
- forming an interfacial layer on an upper surface of the substrate;
- forming a first high-k dielectric layer on the interfacial layer;
- forming a first titanium only layer on the first high-k dielectric layer without oxidizing the first titanium only layer;
- forming a second high dielectric layer on the first titanium only layer such that the first titanium only layer is not oxidized by a deposition process before the second high-k dielectric layer is formed on the first titanium only layer;
- and wherein the first titanium only layer is oxidized by oxygen from or through the first and the second high-k dielectric layers;
- forming a third high-k dielectric layer on the second high-k dielectric layer;
- forming a second titanium (Ti) only layer on the third high-k dielectric layer;
- and
- forming a fourth high-k dielectric layer on the second titanium only layer such that the second titanium only layer is not oxidized by a deposition process before the fourth high-k dielectric layer is formed on the second titanium only layer;
- and wherein the second titanium only layer is oxidized by oxygen from or through the third and the fourth high-k dielectric layers.
10 more elements
Dependencies are inferred from the claim text.