Substrates with self-aligned buried dielectric and polycrystalline layers

Abstract

Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. A semiconductor layer is implanted over a first depth range of an inert gas species to modify the crystal structure of a semiconductor material of the semiconductor layer and form a first modified region. The semiconductor layer is annealed with a first annealing process to convert the semiconductor material within the first modified region to a non-single-crystal layer. The semiconductor layer is also implanted with ions of an element over a second depth range to modify the crystal structure of the semiconductor material of the semiconductor layer and form a second modified region containing a concentration of the element. The semiconductor layer is annealed with a second annealing process to convert the semiconductor material within the second modified region to an insulator layer containing the element.

Dependencies are inferred from the claim text.