Semiconductor device and method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsTakeo Furuhata, Tomohiro Shinagawa
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Abstract
An object is to provide a technology capable of suppressing a crack of a crystalline nitride layer which is generated due to a stress caused by difference in thermal expansion coefficients between a crystalline nitride and diamond. A semiconductor device includes a crystalline nitride layer, a structure containing silicon, and a diamond layer. The structure is disposed on a first main surface of the crystalline nitride layer. The diamond layer is disposed at least on a lateral portion of the structure and has a void between the diamond layer and the first main surface of the crystalline nitride layer. The void is a stress absorbing space, for example.
Claims12
A semiconductor device, comprising:
- a crystalline nitride layer;
- a structure comprising silicon disposed on a first main surface of the crystalline nitride layer;
- and
- a diamond layer disposed at least on a lateral portion of the structure and having a void between the diamond layer and the first main surface of the crystalline nitride layer, wherein:
- (i) the first main surface of the crystalline nitride layer comprises a flat surface, and a lower end of the void and a lower end of the structure are in contact with the flat surface, (ii) the structure has an isolated pattern in a planar view and the diamond layer covers the structure in a planar view, or both (i) and (ii).
A semiconductor device, comprising:
- a crystalline nitride layer;
- a structure comprising silicon disposed on a first main surface of the crystalline nitride layer;
- and
- a diamond layer disposed at least on a lateral portion of the structure and having a void between the diamond layer and the first main surface of the crystalline nitride layer,
- wherein a plurality of the structures are disposed on the first main surface of the crystalline nitride layer,
- the diamond layer is disposed to be adjoined to adjacent structures among the plurality of the structures, and
- at least one of a plurality of the diamond layers is out of contact with the first main surface of the crystalline nitride layer.
A method of manufacturing a semiconductor device, the method comprising:
- preparing a crystalline nitride layer;
- forming a structure comprising silicon on a first main surface of the crystalline nitride layer;
- forming a growth nucleus of diamond on a surface of the structure;
- and
- forming, at least on a lateral portion of the structure, a diamond layer having a void between the diamond layer and the first main surface of the crystalline nitride layer by growing the growth nucleus.
Dependencies are inferred from the claim text.