High-voltage drain extended MOS transistor
AssigneeTexas Instruments Incorporated
InventorsSunglyong Kim, Seetharaman Sridhar, Sameer Pendharkar
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Abstract
A semiconductor device includes a MOS transistor located within a semiconductor substrate of a first conductivity type. The transistor includes a body well located between a drain well and a substrate contact well. A buried voltage blocking region of a second conductivity type is located within the substrate and is connected to the body well. The buried voltage blocking region extends toward the substrate contact well, with an unmodified portion of the substrate remaining between the voltage blocking region and the substrate contact well.
Claims16
A method of forming an electronic device, comprising:
- forming within a semiconductor substrate having a first conductivity type a body well having a second different conductivity type and a drain well of a drain-extended (DE)-MOS transistor, the drain well having the first conductivity type;
- and
- forming within said semiconductor substrate a junction termination diode having first and second terminals, said first terminal connected to the substrate at a substrate contact well having the first conductivity type, and said second terminal connected to said body well.
A method of forming an integrated circuit, comprising:
- forming within a p-type semiconductor substrate an n-type body well and a p-type drain well of a drain-extended (DE)-MOS transistor;
- and
- forming within said semiconductor substrate a junction termination diode having first and second terminals, said first terminal connected to the substrate at a p-type substrate contact well, and said second terminal connected to said body well.
Dependencies are inferred from the claim text.