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US 10,651,272 B2Granted
Semiconductor device and full-wave rectifier circuit
AssigneeUnited Semiconductor Japan Co., Ltd.
InventorKatsuyoshi Matsuura
Life of this patent
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Abstract
One aspect of a semiconductor device includes a plurality of first structures, in which each of the first structures includes: a first N-type region; a P-type region which is surrounded by the first N-type region; and a second N-type region which is surrounded by the P-type region. The first N-type region and the P-type region are wired, and the plurality of first structures are connected in parallel to form one diode.
Claims10
A semiconductor device, comprising
- a plurality of first structures, wherein:
- each of the first structures includes:
- a first N-type region;
- a P-type region which is surrounded by the first N-type region;
- and
- a second N-type region which is surrounded by the P-type region;
- a plurality of the first N-type region and a plurality of the P-type region are mutually wired in common between the plurality of first structures as an anode by a wire;
- a plurality of the second N-type regions are mutually wired in common between the plurality of first structures as a cathode by the wire;
- and
- the plurality of first structures are connected in parallel to form one diode.
7 more elements
A semiconductor device, comprising
- a first structure, wherein:
- the first structure includes:
- a first N-type region;
- a first P-type region which is surrounded by the first N-type region;
- and
- a second N-type region which is surrounded by the first P-type region;
- a second structure, wherein:
- the second structure includes:
- a third N-type region;
- a second P-type region which is surrounded by the third N-type region;
- and
- a fourth N-type region which is surrounded by the second P-type region;
- wherein:
- the first N-type region, the first P-type region, the third N-type region and the second P-type region are mutually wired in common between the first structure and the second structure as an anode by a wire;
- the second N-type region and the fourth N-type region are mutually wired in common between the first structure and the second structure as a cathode by the wire;
- and
- the first structure and the second structure are connected in parallel to form a diode.
14 more elements
Dependencies are inferred from the claim text.