Semiconductor device having a trench structure

A semiconductor device, comprising:

• a wide bandgap semiconductor substrate of a first conductivity type having a first impurity concentration and having a front surface and a rear surface;
• a first wide bandgap semiconductor layer of the first conductivity type having a second impurity concentration higher than the first impurity concentration and having a first side and a second side, formed on the front surface of the wide bandgap semiconductor substrate of the first conductivity type having the first impurity concentration;
• and
• an element structure including:
• a first-conductivity-type region selectively formed in the surface of the first wide bandgap semiconductor layer of the first conductivity type, the first-conductivity-type region having an impurity concentration that is higher than that of the first wide bandgap semiconductor layer of the first conductivity type;
• a first base region of a second conductivity type selectively formed in a surface of the first conductivity type region;
• a second base region of a second conductivity type selectively formed in the first conductivity type region;
• a wide bandgap semiconductor layer of the second conductivity type formed on the surface of the first side of the first wide bandgap semiconductor layer of the first conductivity type, opposite the second side of the first wide bandgap semiconductor layer of the first conductivity type facing the wide bandgap semiconductor substrate;
• a source region of the first conductivity type selectively formed in a surface layer of the wide bandgap semiconductor layer of the second conductivity type;
• a contact region of the second conductivity type;
• and
• a trench penetrating the wide bandgap semiconductor layer of the second conductivity type and formed shallower than the second base region, wherein, the first base region of the second conductivity type, as viewed from an upper surface of the wide bandgap semiconductor layer of the second conductivity type, is separated from the second base region of the second conductivity type in a first direction and has a shallow bottom region and a plurality of deep bottom regions below the shallow bottom region that both extend in a second direction perpendicular to the first direction, and wherein the shallow bottom region extends continuously across the plurality of deep bottom regions and a distance between adjacent deep bottom regions ranges from 0.2 μm to 1.9 μm along said second direction.